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Fundamental growth processes on different gallium arsenide surfaces in metal organic vapor phase epitaxy

Techn. University, Diss., 2000--Berlin.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/614476744
CreatorsPristovsek, Markus.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
TypeOnline-Publikation.

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