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Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS /

Thesis (Ph.D.(Physics))--University of Pretoria, 2009. / Includes abstract in English. Includes bibliographical references. Also available online.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/650064684
Date January 2009
CreatorsNyamhere, Cloud.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceAccess to E-Thesis

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