GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some results on InGaAsN/GaAsN/AlGaAs laser diodes are also presented. / Singapore-MIT Alliance (SMA)
Identifer | oai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3906 |
Date | 01 1900 |
Creators | Wang, S.Z., Yoon, Soon Fatt |
Source Sets | M.I.T. Theses and Dissertation |
Language | en_US |
Detected Language | English |
Type | Article |
Format | 293743 bytes, application/pdf |
Relation | Innovation in Manufacturing Systems and Technology (IMST); |
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