GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some results on InGaAsN/GaAsN/AlGaAs laser diodes are also presented. / Singapore-MIT Alliance (SMA)
| Identifer | oai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3906 |
| Date | 01 1900 |
| Creators | Wang, S.Z., Yoon, Soon Fatt |
| Source Sets | M.I.T. Theses and Dissertation |
| Language | en_US |
| Detected Language | English |
| Type | Article |
| Format | 293743 bytes, application/pdf |
| Relation | Innovation in Manufacturing Systems and Technology (IMST); |
Page generated in 0.0023 seconds