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In this thesis, a two-step de-embedded techniques was applied to measure the important parameters, ft and fmax , of the heterojunction bipolar transistors(HBTs).
The same technique was also used to measure the wide-band S parameters for modeling and evaluating the bump chip carrier(BCC) packages. In the simulation, the Ansoft HFSS simulator was used to calculate the insertion and return losses for some bare and packaged test chips. Comparison between simulated and measured results has been discussed in detail to illustrate the applicability of the HFSS simulator.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0630101-120251 |
| Date | 30 June 2001 |
| Creators | Huang, Hui-Hsiang |
| Contributors | Sheng-fuh Chang, Tzong-Lin Wu, Huey-Ru Chuang, Tzyy-Sheng Horng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630101-120251 |
| Rights | withheld, Copyright information available at source archive |
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