This work deals with the power cycling reliably of power modules
and discrete devices. A small part was tested with standard test equipment,
but the majority of devices were tested with an advanced test approach with
additional switching losses. A large variety of packages under different
conditions were tested: Discrete low-voltage silicon MOSFETs (<100 V),
discrete SiC MOSFETs, baseplate-free SiC modules, medium power silicon
modules and high power silicon modules. The core of the work is the
investigation of low temperature swings in the transition between elastic and
plastic deformation. During high operation temperatures, no significant
increase in lifetime was observed, but at reduced junction temperatures, the
impact was significant. All experimental results were transferred into a 3D
simulation environment, for further investigation of the temperature and
current distribution as well as the mechanical fatigue parameters, to allow a
better understanding of the physical processes.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:85946 |
| Date | 30 June 2023 |
| Creators | Schwabe, Christian |
| Contributors | Basler, Thomas, Kaminski, Nando, Lutz, Josef, Technische Universität Chemnitz |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:doctoralThesis, info:eu-repo/semantics/doctoralThesis, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
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