In this thesis an attempt is made to understand certain experimental
results in optical excitation of impurities in semi-conductors. These results are: i) the temperature- and concentration-dependence of the halfwidths of the absorption peaks and ii) the changes in the absorption lines when a compensating impurity is added. These effects are explained by studying the influence (on the neutral absorbing impurities) of the internal fields produced by the ionised impurities. For boron-doped silicon the first effect is due to the inhomogeneity in the field and the second to the quadratic Stark effect produced by the field. An analysis is also presented of the effect on the spectrum of a uniform applied field. / Science, Faculty of / Physics and Astronomy, Department of / Graduate
| Identifer | oai:union.ndltd.org:UBC/oai:circle.library.ubc.ca:2429/36981 |
| Date | January 1967 |
| Creators | Cheng, Yiu-Chung |
| Publisher | University of British Columbia |
| Source Sets | University of British Columbia |
| Language | English |
| Detected Language | English |
| Type | Text, Thesis/Dissertation |
| Rights | For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use. |
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