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Design and fabrication of nanostructures for light-trapping in ultra-thin solar cells

Reducing the absorber thickness is an attractive solution to decrease the production cost of solar cells. Furthermore, it allows to reduce the amount of material needed and improve the current collection in the cell. This thesis has been focused on the design of nanostructures to enhance light absorption in very small semiconductor volumes in order to achieve efficient ultra-thin solar cells. First, we have proposed an original light-trapping concept for ultra-thin amorphous silicon (a-Si:H) solar cells. A one-dimensional metallic grating is patterned on the front surface of the cell deposited on a metallic mirror. Broadband multi-resonant absorption has been demonstrated for both light polarizations. The metallic grating is also used as an alternative transparent electrode in order to reduce optical losses in the front contact. A detailed analysis of the multi-resonant absorption mechanism has been carried out through numerical calculations. The fabrication and optical characterization of ultra-thin a-Si:H solar cells with metallic gratings have validated the multi-resonant approach.Second, we have proposed a design with a two-dimensional metallic grid as a resonant front contact for very thin (25 nm) gallium arsenide (GaAs) layers. We have shown through the design and fabrication of a proof-of-concept structure the potential of metallic nanogrids to confine efficiently light absorption with an ultra-thin GaAs layer.Finally, advanced light-trapping structures could also allow a thickness reduction of crystalline silicon wafers of a factor 20 to 100 with respect to state-of-the-art cells. We have developed a process to transfer micron-thick epitaxial crystalline silicon (c-Si) layers onto a low-cost host substrate. Inverted nanopyramids have also been fabricated in crystalline silicon in order to achieve a broadband anti-reflection effect. It opens promising perspectives towards the realization of double-sided nanopatterned ultra-thin c-Si cells.

Identiferoai:union.ndltd.org:CCSD/oai:tel.archives-ouvertes.fr:tel-00986262
Date22 October 2013
CreatorsMassiot, Inès
PublisherUniversité Paris Sud - Paris XI
Source SetsCCSD theses-EN-ligne, France
LanguageEnglish
Detected LanguageEnglish
TypePhD thesis

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