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Reliability study of InGaN/GaN light-emitting diode

published_or_final_version / Electrical and Electronic Engineering / Master / Master of Philosophy

  1. 10.5353/th_b4322415
  2. b4322415
Identiferoai:union.ndltd.org:HKU/oai:hub.hku.hk:10722/56803
Date January 2009
CreatorsLi, Zonglin, 李宗林
ContributorsChoi, HW, Lai, PT
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Source SetsHong Kong University Theses
LanguageEnglish
Detected LanguageEnglish
TypePG_Thesis
Sourcehttp://hub.hku.hk/bib/B43224155
RightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works., Creative Commons: Attribution 3.0 Hong Kong License
RelationHKU Theses Online (HKUTO)

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