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Barium Doped Titanium Silicon Oxide with Equivalent Oxide Thickness below 1 nm Prepared by Liquid Phase Deposition

High dielectric constant barium doped titanium silicon oxide films with equivalent oxide thickness below 1 nm can be prepared by liquid phase deposition. We learn from this research that the deposition rate of titanium silicon oxide films can be much enhanced by nitric acid incorporation, and the dielectric constant of materials can be increased by the dipole polarization from barium. The key parameter for the deposition rate, refractive index, and the dielectric constant of barium doped titanium silicon oxide is the molarity of barium nitrate. The electrical properties can be improved effectively by thermal annealing treatments. The optimum equivalent oxide thickness of barium doped titanium silicon oxide thin film is 0.9 nm with the optical thickness of 7.4 nm. The high dielectric constant can reach 31.9 and the leakage current density is 5 ¡Ñ 10-6 A/cm2 at the electrical field intensity of 5 MV/cm, which has high potential application for the next generation MOSFET.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0721105-161946
Date21 July 2005
CreatorsTung, Kuan-wen
ContributorsMing Chen, Chung-Cheng Chang,, Tsu-Hsin Chang, Jeng Gong, Cho-Ming Chiang, Ming-Kwei Lee
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721105-161946
Rightsnot_available, Copyright information available at source archive

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