Implementation of AlGaN/GaN based high electron mobility transistor on ferroelectric materials for multifunctional optoelectronic-acoustic-electronic applications

Description

Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009. / Committee Chair: William. Alan Doolittle; Committee Member: Jeffrey Nause; Committee Member: Linda S. Milor; Committee Member: Shyh-Chiang Shen; Committee Member: Stephen E. Ralph.

Links & Downloads

1. http://hdl.handle.net/1853/28209

Tags

Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/456209397
Date	January 2009
Creators	Lee, Kyoung-Keun.
Publisher	Atlanta, Ga. : Georgia Institute of Technology,
Source Sets	OCLC
Language	English
Detected Language	English
Source	Available online, Georgia Institute of Technology: