A low voltage low power sigma¡Vdelta modulator for voice applications is presented. The implementation of proposed sigma-delta modulator is based on switched-capacitor circuit. Bootstrapped switches were used to replace CMOS transmission gates for increasing the insufficient driving of switched-capacitor circuit under the low voltage operation. To reduce the power dissipation, an improved current mirror OTA were designed with rail-to-rail output swing, which can also make the voltage gain enhance 10~20 dB and overcome the poor voltage gain shortage of traditional current mirror OTA. The post-simulation result shows that the modulator achieves a dynamic range of 77 dB, a peak signal-to-noise ratio of 82 dB, and the sigma-delta modulator dissipates 25£gW under 1.1-V voltage supply, using TSMC 0.18£gm 1P6M CMOS technology.
Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0711105-164417 |
Date | 11 July 2005 |
Creators | Yang, Shu-Ting |
Contributors | Yao-Tsung Tsai, Shiang-Hwua Yu, I. J. Huang, Kao Chia-Hsiung, Jyi-Tsong Lin |
Publisher | NSYSU |
Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
Language | Cholon |
Detected Language | English |
Type | text |
Format | application/pdf |
Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0711105-164417 |
Rights | not_available, Copyright information available at source archive |
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