Indium Phosphide epitactic layers grown by MOCVD and lightly doped with Zn and Mg (p-type) have been studied by Hall effect measurements and secondary ion mass spectroscopy (SIMS). The Zn-doped samples showed a uniform distribution of the acceptor concentration as a function of depth. Mg doped samples showed strong Mg concentration gradients, with substantial diffusion into the substrate. An electrical transport model has been developed for each of the previous cases. These models provided excellent agreement with experiment. The uniformly Zn-doped samples have been used for a detailed study of hopping conduction. Excellent quantitative agreement can be reached between theory and experiment both in the variable range hopping regime and in the nearest neighbor hopping regime. The saturation of the latter regime has been observed, and a model has been found in qualitative agreement with it. An interpretation of the low temperature data on the basis of the presence of a Coulomb gap in the impurity band density of states is not appropriate.
| Identifer | oai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:QMM.59298 |
| Date | January 1989 |
| Creators | Belache, Boukhalfa |
| Publisher | McGill University |
| Source Sets | Library and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada |
| Language | French |
| Detected Language | English |
| Type | Electronic Thesis or Dissertation |
| Format | application/pdf |
| Coverage | Master of Science (Department of Physics.) |
| Rights | All items in eScholarship@McGill are protected by copyright with all rights reserved unless otherwise indicated. |
| Relation | alephsysno: 001067756, proquestno: AAIMM63512, Theses scanned by UMI/ProQuest. |
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