Nearly dislocation-free vertical GaN pillars in nanoscale were grown on Si (111) surface through self-assembly by molecular-beam epitaxy. No extra catalytic or nanostructural assistance has been employed. These nanorods have a lateral dimension from 10 nm to ~ 800 nm and a height of 50 nm to 3
Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-1013104-163813 |
Date | 13 October 2004 |
Creators | Hsiao, Ching-Lien |
Contributors | none, none, none, none, none, none, Li-wei Tu, none |
Publisher | NSYSU |
Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
Language | English |
Detected Language | English |
Type | text |
Format | application/pdf |
Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1013104-163813 |
Rights | not_available, Copyright information available at source archive |
Page generated in 0.0013 seconds