We discuss the PL spectra of the InN band gap. The InN thin film epitaxy grows on both Si (111) and sapphire (0001) by the PA-MBE (molecular beam epi). We change different grown conditions to improve the sample quality.
In experiment part, the first step is to make sure the sample is really InN, using X-ray diffraction. And then we compare the quality of all sample, by the FWHM of X-ray diffraction rocking curve and the SEM pictures.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0729104-220803 |
| Date | 29 July 2004 |
| Creators | Fan, Ni-wan |
| Contributors | Li-wei Tu, Ikai Lo, Jih-Chen Chiang, Der-Jun Jang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-220803 |
| Rights | campus_withheld, Copyright information available at source archive |
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