Tandem structure for OLED application with HAT-CN:Alq3 interlayer is studied. It has been found that tandem cell with such interlayer structure has a low turn-on voltage as comparing to other types of interlayer structure. Three research topics are included in this research:
(1) Study of carrier generation , carrier transport , and other optoelectronic properties for tandem cells with HAT-CN:Alq3 interlayer.
(2) Study of white OLED device with single emitting layer and HAT-CN:Alq3 interlayer.
(3) Study of electroluminescence property of top and bottom device of a tandem cell with HAT-CN:Alq3 interlayer.
Experimental results show that electron transport is slowing down with increasing Alq3 concentration in the HAT-CN:Alq3 interlayer. However concentration of Alq3 in the interlayer does not affect transport property of hole. A white OLED with HAT-CN:Alq3 interlayer can reach 40,500 cd/m2 at 2180 mA/cm2 with a power efficiency of 1.96 lm/W and CIE coordicate of (0.34,0.32).
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0813112-152809 |
| Date | 13 August 2012 |
| Creators | Chen, Chien-Heng |
| Contributors | Mei-Ying Chang, Chih-Chien Lee, Ray-Chung Chang, Ping-Tsung Huang, Shun-Wei Liu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0813112-152809 |
| Rights | user_define, Copyright information available at source archive |
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