The multidisciplinary field of memristors calls for the necessity for theoreticallyinclined researchers and experimenters to join forces, merging complementary expertise and technical know-how, to develop and implement rigorous and systematic techniques to design variability-aware memristor-based circuits and systems. The availability of a predictive physics-based model for a memristor is a necessary requirement before commencing these investigations. An interesting dynamic phenomenon, occurring ubiquitously in non-volatile memristors, is fading memory. The latter may be defined as the appearance of a unique steady-state behavior, irrespective of the choice of the initial condition from an admissible range of values, for each stimulus from a certain family, for example, the DC or the purely-AC periodic input class. This paper first provides experimental evidence for the emergence of fading memory effects in the response of a TaOₓ redox-based random access memory cell to inputs from both of these classes. Leveraging the predictive capability of a physics-based device model, called JART VCM v1, a thorough system-theoretic analysis, revolving around the Dynamic Route Map graphic tool, is presented. This analysis allows to gain a better understanding of the mechanisms, underlying the emergence of history erase effects, and to identify the main factors, that modulate this nonlinear phenomenon, toward future potential applications.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:88339 |
| Date | 02 February 2024 |
| Creators | Ascoli, Alon, Menzel, Stephan, Rana, Vikas, Kempen, Tim, Messaris, Ioannis, Demirkol, Ahmet Samil, Schulten, Michael, Siemon, Anne, Tetzlaff, Ronald |
| Publisher | Wiley-VCH GmbH |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 2199-160X, 10.1002/aelm.202200182, info:eu-repo/grantAgreement/Deutsche Forschungsgemeinschaft/SPP 2262: Memristive Devices Toward Smart Technical Systems/441957207//Universal Memcomputing in Hardware Realizations of Memristor Cellular Nonlinear Networks/Mem2CNN |
Page generated in 0.0017 seconds