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GaN-based heterostructure field effect transistors and MMICs for high frequency applications

Zugl.: Darmstadt, Techn. Univ., Diss., 2009

  1. http://d-nb.info/999595059/04
Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/530378611
Date January 2009
CreatorsSeo, Sanghyun
PublisherAachen Shaker
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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