We have grown Ga1-xMnxN films on c-sapphire substrate by plasma-assisted MBE with different Mn fluxes. The films are characterized by scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), electron backscatter diffraction (EBSD), high¡Vresolution X-ray diffraction (HR-XRD), Raman scattering, photoluminescence (PL), cathodoluminescence (CL), transmission spectra, reflection spectra and X-ray photoelectron spectroscopy (XPS).
The SEM images show films thickness between 550 to 850 nm and EBSD indicates samples normal direction is c-axis. EDS spectra show the Mn is present in GaMnN samples. According to XRD and Raman scattering, Mn element occupying Ga site on GaN and Mn-N clusters phase coexist on films. From transmission and reflection spectra, stronger absorption at about 1.5 eV and 1.8 eV to 3.4 eV absorption band are found. The PL and CL show GaN band gap at 3.4 eV and blue band from 2.4 eV to 3.3 eV maybe due to defect level. Finally, the XPS spectra indicate Mn acceptor level is contributed to Mn+2 or Mn+3 states.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0809111-152543 |
| Date | 09 August 2011 |
| Creators | Chiang, Wei-Yang |
| Contributors | Der-Jun Jang, Quark Chen, Shih-Wei Feng, Li-Wei Tu, Wang-Chuang Kuo |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809111-152543 |
| Rights | user_define, Copyright information available at source archive |
Page generated in 0.0021 seconds