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Phosphorus ion implantation in SiC: influence of the annealing conditions on dopant activation and defects

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Identiferoai:union.ndltd.org:unibo.it/oai:amsdottorato.cib.unibo.it:329
Date17 May 2007
CreatorsCanino, Mariaconcetta <1980>
ContributorsCavallini, Anna
PublisherAlma Mater Studiorum - Università di Bologna
Source SetsUniversità di Bologna
LanguageEnglish
Detected LanguageEnglish
TypeDoctoral Thesis, PeerReviewed
Formatapplication/pdf
Rightsinfo:eu-repo/semantics/openAccess

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