Ferroelectric HfO₂ attracts a huge amount of attention not only for memory and negative capacitance, but also for programmable logic including memory-in-logic and neuromorphic applications. However, the understanding of material fundamentals still needs to be improved. This paper gives material fundamentals and new insights to this ferroelectric material for future device applications. In particular, the key role of dopants, effects of the interface on the ferroelectric phase, and a detailed discussion of the switching kinetics are of central focus. Based on material properties newly obtained, we discuss opportunities of ferroelectric HfO₂ for device applications.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:79647 |
| Date | 20 June 2022 |
| Creators | Toriumi, Akira, Xu, Lun, Mori, Yuki, Tian, Xuan, Lomenzo, Patrick D., Mulaosmanovic, Halid, Materano, Monica, Mikolajick, Thomas, Schroeder, Uwe |
| Publisher | IEEE |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 978-1-7281-4032-2, 10.1109/IEDM19573.2019.8993464 |
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