Two-dimensional (2D) MoS2 exhibits excellent optical, electrical, and mechanical properties, suggesting its great potential in the development of optoelectronic devices. Given its low electron affinity, MoS2 tends to form a Schottky contact with metal electrodes. Therefore, a back-to-back diode structure is usually formed in symmetric metal-MoS2-metal devices, and a weak rectifying effect is observed in such devices. Recent research progress in our group found that the self-aligned MoS2-Mo5N6 lateral heterostructure effectively lowers the barrier height and leads to an Ohmic-like contact between 2D MoS2 and Mo5N6, Hereby, we investigate the fabrication and performance improvement of a MoS2/Mo5N6 Schottky diode by eliminating one of the Schottky contacts in MoS2 devices through a Mo5N6-MoS2-Au asymmetric device structure. Our results show that by protecting the interface of MoS2 and Mo5N6, the resistance at the same voltage is significantly reduced. Compared with the MoS2/Mo5N6 Schottky diode without interface protection, the quality factor of the device with protected interface is lower, indicating that the device with protected interface is closer to an ideal Schottky diode.
| Identifer | oai:union.ndltd.org:bu.edu/oai:open.bu.edu:2144/45057 |
| Date | 26 August 2022 |
| Creators | Wang, Xinyi |
| Contributors | Ling, Xi, Paiella, Roberto |
| Source Sets | Boston University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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