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Materials issues with the integration of lattice-mismatched In Inx̳Ga₁₋x̳As devices on GaAs

Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998. / In title on t.p., double-underscored characters appear as subscript. / Includes bibliographical references (p. 170-178). / by Mayank T. Bulsara. / Ph.D.

Identiferoai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/9581
Date January 1998
CreatorsBulsara, Mayank T. (Mayank Thakordas)
ContributorsEugene A. Fitzgerald., Massachusetts Institute of Technology. Dept. of Materials Science and Engineering
PublisherMassachusetts Institute of Technology
Source SetsM.I.T. Theses and Dissertation
LanguageEnglish
Detected LanguageEnglish
TypeThesis
Format178 p., 10771398 bytes, 10771153 bytes, application/pdf, application/pdf, application/pdf
RightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission., http://dspace.mit.edu/handle/1721.1/7582

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