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Single- and few-layer graphene by ambient pressure chemical vapor deposition on nickel

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010. / Includes bibliographical references (p. 169-177). / An ambient pressure chemical vapor deposition (APCVD) process is used to fabricate graphene based films consisting of one to several graphene layers across their area. Polycrystalline Ni thin films are used and the graphene can be transferred from the Ni surface to dielectric substrates in order to integrate them to graphene device prototypes. Uniform single layer graphene can be grown with the same process by using single crystalline Ni with a (111) surface orientation. Raman spectroscopy and electron diffraction characterization is undertaken in order to determine the nature of the layer stacking for the case of multilayer graphene. / by Alfonso Reina Ceeco. / Ph.D.

Identiferoai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/59230
Date January 2010
CreatorsReina Ceeco, Alfonso
ContributorsJing Kong., Massachusetts Institute of Technology. Dept. of Materials Science and Engineering., Massachusetts Institute of Technology. Dept. of Materials Science and Engineering.
PublisherMassachusetts Institute of Technology
Source SetsM.I.T. Theses and Dissertation
LanguageEnglish
Detected LanguageEnglish
TypeThesis
Format177 p., application/pdf
RightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission., http://dspace.mit.edu/handle/1721.1/7582

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