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The effect of strain and orientation on Inx̳Ga₁₋x̳As layers grown by molecular beam epitaxy

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1988. / On t.p. all "x̳" is subscript. / Includes bibliographical references. / Kimberley Elcess. / Ph.D.

Identiferoai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/109624
Date January 1988
CreatorsElcess, Kimberley
ContributorsClifton G. Fonstad., Massachusetts Institute of Technology. Department of Materials Science and Engineering., Massachusetts Institute of Technology. Department of Materials Science and Engineering.
PublisherMassachusetts Institute of Technology
Source SetsM.I.T. Theses and Dissertation
LanguageEnglish
Detected LanguageEnglish
TypeThesis
Format180 leaves, application/pdf
RightsMIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission., http://dspace.mit.edu/handle/1721.1/7582

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