Thesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2001. / Cataloged from PDF version of thesis. / Includes bibliographical references (page 31). / Oxygen precipitates in silicon can be used (in a process called internal gettering) as sites of heterogeneous nucleation of precipitates of iron and other transition metal that are harmful to solar cell device operation. Oxygen precipitate densities in p- (10¹⁴ boron atoms/cm³) wafers were quantified using chemical etch techniques. The precipitate densities were then used to estimate times to getter iron based on a diffusion limited precipitation model. Oxygen precipitate densities in p++ (10¹⁹ boron atoms/cm³) wafers were quantified using chemical etch techniques. High levels of boron in p++ wafers make quantifying precipitate densities particularly difficult, via etching, or other methods because precipitate densities in highly doped wafers are very high and the size of precipitates small. / by Ashley Salomon. / S.B.
| Identifer | oai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/114090 |
| Date | January 2001 |
| Creators | Salomon, Ashley |
| Contributors | Lionel C. Kimerling., Massachusetts Institute of Technology. Department of Materials Science and Engineering., Massachusetts Institute of Technology. Department of Materials Science and Engineering. |
| Publisher | Massachusetts Institute of Technology |
| Source Sets | M.I.T. Theses and Dissertation |
| Language | English |
| Detected Language | English |
| Type | Thesis |
| Format | 31 pages, application/pdf |
| Rights | MIT theses are protected by copyright. They may be viewed, downloaded, or printed from this source but further reproduction or distribution in any format is prohibited without written permission., http://dspace.mit.edu/handle/1721.1/7582 |
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