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Growth, characterization and thermal stability of undoped and in-situ doped silicon-germanium heteroepitaxial layers

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1993. / Includes bibliographical references (leaves 186-196). / by Syun-Ming Jang. / Ph.D.

Identiferoai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/12744
Date January 1993
CreatorsJang, Syun-Ming
ContributorsRafael Reif., Massachusetts Institute of Technology. Dept. of Materials Science and Engineering
PublisherMassachusetts Institute of Technology
Source SetsM.I.T. Theses and Dissertation
LanguageEnglish
Detected LanguageEnglish
TypeThesis
Format198 leaves, 14902905 bytes, 14902665 bytes, application/pdf, application/pdf, application/pdf
RightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission., http://dspace.mit.edu/handle/1721.1/7582

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