Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2010. / Cataloged from PDF version of thesis. / Includes bibliographical references (p. 89-91). / A diode laser emitting at mid-infrared wavelength (2~5 pm) is an ideal light source for petrochemical or industrial-important gas sensing. Antimony-based III-V compound semiconductor material is the most prominent pseudomorphic epitaxy candidate for this application. However, phosphide-based material not only has the potential to reach this wavelength utilizing a strained active region but also takes the advantage of sophisticated material study from telecommunication technology. This thesis presents the realization of a 1.97 pm emission ridge waveguide laser in design, fabrication, and characterization phases. Ino.85 Gao.15As/Alo.1Ino.4 8Gao.42As strained multiple quantum wells structures have being built on InP substrates. Structural, optical, and electrical properties of the material have being tested and summarized. / by Pei-Chun Chi. / S.M.
| Identifer | oai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/62685 |
| Date | January 2010 |
| Creators | Chi, Pei-Chun |
| Contributors | Leslie A. Kolodziejski and Silvija Gradečak., Massachusetts Institute of Technology. Dept. of Materials Science and Engineering., Massachusetts Institute of Technology. Dept. of Materials Science and Engineering. |
| Publisher | Massachusetts Institute of Technology |
| Source Sets | M.I.T. Theses and Dissertation |
| Language | English |
| Detected Language | English |
| Type | Thesis |
| Format | 91 p., application/pdf |
| Rights | M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission., http://dspace.mit.edu/handle/1721.1/7582 |
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