The aim of this work was to find a correlation between the electrical, optical and microstructural properties of thin SiO2 layers containing group IV nanostructures produced by ion beam synthesis. The investigations were focused on two main topics: The electrical properties of Ge- and Si-rich oxide layers were studied in order to check their suitability for non-volatile memory applications. Secondly, photo- and electroluminescence (PL and EL) results of Ge-, Si/C- and Sn-rich SiO2 layers were compared to electrical properties to get a better understanding of the luminescence mechanism.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:21773 |
| Date | January 2002 |
| Creators | Gebel, Thoralf |
| Publisher | Forschungszentrum Rossendorf |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:report, info:eu-repo/semantics/report, doc-type:Text |
| Source | Wissenschaftlich-Technische Berichte / Forschungszentrum Rossendorf; FZR-350 Juli 2002 |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | urn:nbn:de:bsz:d120-qucosa-237209, qucosa:22351 |
Page generated in 0.0016 seconds