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Synthesis and Electrical Behavior of VO2 Thin Films Grown on SrRuO3 Electrode Layers

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<p>In this study, VO2 films were grown on conducting oxide SrRuO3 layers. Apart from applications in magnetism, SrRuO3 is a widely studied template material to create multi-functional oxide heterostructures. Here, SrRuO3 buffered SrTiO3 (111) and Si/SiO2 were selected as platforms for VO2 growth. The properties of VO2 thin films grown on SrRuO3 buffer layers, as well as thermally and electric-field induced metal-insulator transition were systematically studied. Numerous growth experiments were conducted to identify the optimal growth conditions. Utilizing the current shunting associated with the conductive underlayer, electric-field induced metal-insulator transition was investigated in both the in-plane and out-of-plane configurations. A distributed resistance network with general applicability to understanding metal-insulator transitions is proposed to predict the electrical behavior of VO2 grown on conducting layers.</p>

  1. 10.25394/pgs.20089796.v1
Identiferoai:union.ndltd.org:purdue.edu/oai:figshare.com:article/20089796
Date17 June 2022
CreatorsChengyang Zhang (12889487)
Source SetsPurdue University
Detected LanguageEnglish
TypeText, Thesis
RightsCC BY 4.0
Relationhttps://figshare.com/articles/thesis/Synthesis_and_Electrical_Behavior_of_VO2_Thin_Films_Grown_on_SrRuO3_Electrode_Layers/20089796

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