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UHVCVD growth of Si₁-x-yGexCy epitaxial materials and application in heterostructure MOS devices /

Thesis (Ph. D.)--University of Texas at Austin, 1998. / Vita. Includes bibliographical references (leaves 142-149). Available also in a digital version from Dissertation Abstracts.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/44389036
Date January 1998
CreatorsJohn, Soji,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceDigital version accessible at:

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