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Gate-to-channel parasitic capacitance minimization and source-drain leakage evaluation in germanium PMOS /

Thesis (M.S.)--Rochester Institute of Technology, 2008. / Typescript. Includes bibliographical references.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/277239988
Date January 2008
CreatorsKrom, Raymond T.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceOnline version of thesis

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