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An analysis on the simulation of the leakage currents of independent double gate SOI MOSFET transistors a thesis presented to the faculty of the Graduate School, Tennessee Technological University /

Thesis (M.S.)--Tennessee Technological University, 2009. / Title from title page screen (viewed on June 29, 2010). Bibliography: leaves 56-66.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/645167476
Date January 2009
CreatorsMoolamalla, Himaja Reddy,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceClick to access online

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