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A study on electrical and material characteristics of hafnium oxide with silicon interface passivation on III-V substrate for future scaled CMOS technology

Thesis (Ph. D.)--University of Texas at Austin, 2008. / Vita. Includes bibliographical references.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/244251100
Date January 1900
CreatorsOk, Injo,
Publisher[Austin, Tex. : University of Texas Libraries,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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