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The growth and characterization of group III-nitride transistor devices grown by metalorganic chemical vapor deposition

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Identiferoai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/12616
Date27 July 2011
CreatorsWong, Michael Ming
Source SetsUniversity of Texas
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatelectronic
RightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works., Restricted

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