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Technology development and study of rapid thermal CVD high-K gate dielectrics and CVD metal gate electrode for future ULSI MOSFET device integration zirconium oxide, and hafnium oxide /

Thesis (Ph. D.)--University of Texas at Austin, 2003. / Vita. Includes bibliographical references. Available also from UMI Company.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/55223772
Date January 2003
CreatorsLee, Choong-ho.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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