Return to search

Physics and technology of high mobility, strained germanium channel, heterostructure MOSFETs

Thesis (Ph.D.)--Stanford University, 2006. / Adviser: Krishna C. Saraswat. Includes bibliographical references (p. 160-177)

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/123460299
Date January 2006
CreatorsKrishnamohan, Tejas.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
Sourceaccess full-text online access from Digital Dissertation Consortium

Page generated in 0.0015 seconds