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Electrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics /

Thesis (Ph. D.)--University of Hong Kong, 1996. / Includes bibliographical references (leaves 158-160).

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/51380783
Date January 1996
CreatorsZeng, Xu,
PublisherHong Kong : University of Hong Kong,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceView the Table of Contents & Abstract.

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