The effects of silicon, nitrogen and oxygen incorporation and oxygen-scavenging technique on performances of hafnium-based gate dielectric MOSFETs

Description

Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.

Links & Downloads

1. http://repositories.lib.utexas.edu/bitstream/handle/2152/2478/choic94183.pdf

Tags

Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/72482069
Date	January 1900
Creators	Choi, Changhwan.
Publisher	[Austin, Tex. : University of Texas Libraries,
Source Sets	OCLC
Language	English
Detected Language	English