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Enhanced defect generation in gate oxides of P-channel MOS transistors in the presence of water

Thesis (M. S. in Electrical Engineering)--Vanderbilt University, May 2009. / Title from title screen. Includes bibliographical references.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/302268836
Date January 2009
CreatorsDasgupta, Aritra.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
TypeElectronic dissertations.

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