Return to search

Growth and characterization of group III-nitride power transistors, power rectifiers and solar-blind detectors by metalorganic chemical vapor deposition /

Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 158-170). Available also in a digital version from Dissertation Abstracts.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/50775928
Date January 2000
CreatorsLambert, Damien Jean Henri,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceFull text (PDF) from UMI/Dissertation Abstracts International

Page generated in 0.0018 seconds