Return to search

Modeling of narrow-width effect in MOSFET /

Thesis--Ph. D., University of Hong Kong, 1985.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/52011987
Date January 1984
CreatorsLai, Pui-to.
Publisher[Hong Kong : University of Hong Kong],
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceView the Table of Contents & Abstract.

Page generated in 0.0017 seconds