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Ultra-Thin Ag Films on the Sn/Si(111)-√3×√3 Surface Studied by STM / Ultratunna Ag-filmer på Sn/Si(111)-√3×√3 ytan studerat med STM

The growth of atomically flat silver films on Si(111) usually requires a two-step growth, including deposition at low temperature (≈100 K) followed by slowly annealing to room temperature. In addition, flat silver films are usually only obtained on Si(111) for film thicknesses larger than the critical thickness of 6 monolayer. In this work, Ag thin film formation at ambient temperature on Sn/Si(111)-√3×√3 has been investigated experimentally using a combination of scanning tunneling microscopy, scanning tunneling spectroscopy and low-energy electron diffraction. The first buffer layer, probably consisting of both Ag and Sn, formed a partially ordered structure consisting of atomic rows which mainly followed the high-symmetry directions of the underlying Si(111) lattice. From 3 ML coverage, an atomically flat Ag film was formed. Low-energy electron diffraction confirmed that the films grew in the [111]-direction. This shows that atomically flat Ag films as thin as 3 ML can be grown on Sn/Si(111)-√3×√3 by conventional deposition at room temperature. The electronic structures of the films were studied for a range of different coverages by scanning tunneling spectroscopy. The normalized tunneling conductance showed quantum well states in the occupied electronic states, which moved towards the Fermi energy with increasing film thicknesses.

Identiferoai:union.ndltd.org:UPSALLA1/oai:DiVA.org:kau-67779
Date January 2018
CreatorsLavén, Rasmus
PublisherKarlstads universitet, Institutionen för ingenjörsvetenskap och fysik (from 2013)
Source SetsDiVA Archive at Upsalla University
LanguageEnglish
Detected LanguageEnglish
TypeStudent thesis, info:eu-repo/semantics/bachelorThesis, text
Formatapplication/pdf
Rightsinfo:eu-repo/semantics/openAccess

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