Return to search

III-nitride normally-off low-density-drain high electron mobility transistors (LDD-HEMTs) /

Thesis (M.Phil.)--Hong Kong University of Science and Technology, 2007. / Includes bibliographical references. Also available in electronic version.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/176471980
Date January 2007
CreatorsSong, Di.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceView abstract or full-text

Page generated in 0.0015 seconds