<p> A method for the measurement of the microwave conductivity
of a semiconductor subjected to a high electric field is described,
which provides for varying angles between the microwave and applied
electric field vectors. The results of measurements on 10 ohm-em.
n-type germanium at 9.522 GHz with applied electric fields up to
3KV/cm are given. </p> <p> The measurements show that the microwave conductivity is
controlled by the differential carrier mobility (∂V/∂E) for the condition
of microwave and applied electric field vectors parallel. For the case of the fields at right angles the microwave conductivity is controlled by a carrier mobility intermediate between the
d. c. mobility (v/B) and the differential mobility (∂V/∂E). </p> <p> Theoretical expressions for the performance of a proposed "Hot Electron Microwave Rotator" are developed. </p> / Thesis / Master of Engineering (MEngr)
| Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/20002 |
| Date | 04 1900 |
| Creators | Rahman, Mohammad |
| Contributors | Gunn, M. W., Electrical Engineering |
| Source Sets | McMaster University |
| Language | English |
| Detected Language | English |
Page generated in 0.0019 seconds