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Fabrication and characterization of MOCVD grown AIInAs/GaInAs high electron mobility transistors /

Includes bibliographical references (p. 46-51).

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/641159970
Date January 2010
CreatorsNg, Kai Lun.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceView abstract or full-text.

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