Return to search

MOVPE growth and characterization of AlGxGa-1tnxN/GaN heterostructures for HEMT application

Techn. Hochsch., Diss., 2003--Aachen.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/177298152
CreatorsKaluza, Nicoleta Elena.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

Page generated in 0.0014 seconds