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Fabrication and characterization of AlGaN/GaN high electron mobility transistors

Techn. Hochsch., Diss., 2004--Aachen.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/177144369
CreatorsJavorka, Peter.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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