Return to search

Lateral liquid-phase epitaxy growth of SiGe epilayers on Si with asymmetric strain and low threading dislocation densities

No description available.
Identiferoai:union.ndltd.org:mcgill.ca/oai:escholarship.mcgill.ca:d791sj805
Date January 2018
CreatorsO'Reilly, Andrew
ContributorsNathaniel Quitoriano (Supervisor)
PublisherMcGill University
Source SetsMcGill University
Languagehttp://id.loc.gov/vocabulary/iso639-2/eng
Detected LanguageEnglish
TypeThesis
RightsAll items in eScholarship@McGill are protected by copyright with all rights reserved unless otherwise indicated.
RelationPid: 150680

Page generated in 0.001 seconds