Return to search

Analysis of GaN films growth in MOCVD reactor

Using a numerical method to simulate the Metal-Organic
Chemical Vapor Deposition (MOCVD). A study of the GaN films were growth on sapphire substrates, and a new design method which The position of carrier gas inlets and outlets, the gas in inlets by a showerhead reactor, the modified susceptor. The purpose of this research is to maintain deposited GaN film thickness variation range by controlling those parameters which may affect the deposition.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0726104-143956
Date26 July 2004
CreatorsKuo, Feng-Ming
ContributorsTai-Fa Young, Charlie Chang, Jen-Jyh Hwang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726104-143956
Rightsunrestricted, Copyright information available at source archive

Page generated in 0.0014 seconds